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D a ta S hee t, V 1 . 0 , O c tob e r 2 005
BTS 6142D
Smart High-Side Power Switch PROFET One Channel, 12 m
Automotive Power
Never
stop
thinking.
Smart High-Side Power Switch BTS 6142D
Table of Contents Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 Pin Assignment BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.2.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2.3 Reverse Polarity Protection - ReversaveTM . . . . . . . . . . . . . . . . . . . . . . 18 4.2.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 4.3.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5 Package Outlines BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Data Sheet
2
V1.0, 2005-10-25
Smart High-Side Power Switch PROFET
BTS 6142D
Product Summary
The BTS 6142D is a one channel high-side power switch in P-TO-252-5-1 package providing embedded protective functions including ReverSaveTM. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology.
P-TO-252-5-1
Operating voltage Over-voltage protection On-State resistance Nominal load current Load current (ISO) Current limitation Stand-by current for whole device with load
Vbb(on)
VON(CL) RDS(ON)
5.5 .. 24 V 39 V 12 m 7A 27 A 50 A 6 A
IL(nom) IL(ISO) IL6(SC)
Ibb(OFF)
Basic Features
* * * * * Very low standby current Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage
Type BTS 6142D
Data Sheet
Ordering Code SP000074866
3
Package P-TO-252-5-1
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protective Functions
* * * * * * * * * * ReverSaveTM, channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Over-load protection Multi-step current limitation Thermal shutdown with restart Over-voltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD)
Diagnostic Functions
* Proportional load current sense (with defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown) * Open load detection in ON-state by load current sense
Applications
* C compatible high-side power switch with diagnostic feedback for 12 V grounded loads * All types of resistive, inductive and capacitive loads * Most suitable for loads with high inrush currents, so as lamps * Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Overview
1
Overview
The BTS 6142D is a one channel high-side power switch (12 m) in P-TO-252-5-1 power package providing embedded protective functions including ReverSaveTM. ReverSaveTM is a protection feature that causes the power transistors to switch on in case of reverse polarity. As a result, the power dissipation is reduced. The BTS 6142D has a current controlled input and offers a diagnostic feedback with load current sense. The design is based on Smart SIPMOS chip on chip technology.
1.1
Block Diagram
logic IC
voltage sensor over temperature
Rbb
base chip
Vbb
T
IN
ESD
clamp for inductive load current limitation
IIN VIS VIN IS I IS RIS
driver logic
gate control & charge pump load current sense
OUT IL LOAD
Overview .emf
forward voltage drop detection
Figure 1
Block Diagram
Data Sheet
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Smart High-Side Power Switch BTS 6142D
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb VbIN
V bIS IIN
Ibb VBB
VON
IN
VIN RIN IIS V IS IS
BTS 6142D
OUT IL VOUT
RIS
Terms.emf
Figure 2
Terms
Data Sheet
6
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Pin Configuration
2
2.1
Pin Configuration
Pin Assignment BTS 6142D
TAB Vbb
OUT
1
2
3
4
5
OUT
Vbb
IN
IS
TO252-5 .emf
Figure 3
Pin Configuration P-TO-252-5-1
2.2
Pin 1 2 3, Tab 4
Pin Definitions and Functions
Symbol OUT IN Vbb IS I/O O I O Function Output; output to the load; pin 1 and 5 must be externally shorted.1) Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided (see Table 1 "Truth Table" on Page 23). Output; output to the load; pin 1 and 5 must be externally shorted.1)
5
1)
OUT
O
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy.
Data Sheet
7
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Smart High-Side Power Switch BTS 6142D
Electrical Characteristics
3
3.1
Electrical Characteristics
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability.
Tj = 25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. Supply Voltage 3.1.1 3.1.2 Supply voltage Vbb -16 0 38 24 V V - Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj = -40C .. 150C) 1) Supply Voltage for Load Dump Vbb(LD) protection 2) Unit Test Conditions max.
3.1.3
-
45
V
RI = 2 RL = 1.5
-
Logic Pins 3.1.4 3.1.5 3.1.6 3.1.7 3.1.8 Voltage at input pin Current through input pin Voltage at current sense pin Current through sense pin Input voltage slew rate 3) Load current 4)
Vb,IN IIN Vb,IS IIS
dVbIN/dt
-16 -140 -16 -140 -20
63 15 56 15 20
V mA V mA
V/s -
Power Stages 3.1.9 3.1.10 Maximum energy dissipation per channel (single pulse) 3.1.11 Total power dissipation (DC) for whole device Temperatures 3.1.12 Junction temperature 3.1.13 Storage temperature
IL EAS Ptot
-
ILx(SC) A
0.25 50 J W
-
IL(0) = 20 A Tj(0) = 150C TC = 85 C Tj 150 C
-
Tj Tstg
-40 -55
150 150
C C
Data Sheet
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V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Electrical Characteristics
Tj = 25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. ESD Susceptibility 3.1.14 ESD susceptibility HBM Unit Test Conditions max.
VESD
-3
3
kV
according to EIA/JESD 22-A 114B
1) 2) 3)
Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13. Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb-16V. See also Figure 14. Current limitation is a protection feature. Operation in current limitation is considered as "outside" normal operating range. Protection features are not designed for continuous repetitive operation.
4)
Data Sheet
9
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Power Stages
4
4.1
Block Description and Electrical Characteristics
Power Stages
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.
4.1.1
Input Circuit
Figure 4 shows the input circuit of the BTS 6142D. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.
VbIN
Rbb IIN I VZ,IN
Vbb
IN
VIN
Input.emf
Figure 4
Input Circuit
A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current IIN is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission.
IIN tON tOFF t
VOUT 90% 50%
dV/dtON 25% 10%
dV/dtOFF
t
SwitchOn.emf
Figure 5
Switching a Load (resistive)
Data Sheet
10
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Smart High-Side Power Switch BTS 6142D
Power Stages
4.1.2
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Section 4.2.3.
Vbb = 12 V
5 21
W\S
5 21
Tj = 25C
P
&
P
W\S

7M

9
9 EE
Figure 6
Typical On-State Resistance
At small load currents the resistance is artificially increased to improve current sense accuracy. Therefore the forward voltage drop VON at small load currents is no more proportional to the load current IL , but is controlled by an internal "two level controller" to remain clamped to a defined value VON(NL). Figure 7 shows the dependency for a typical device.
Data Sheet
11
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Power Stages
Vbb = 12 V Tj = 25C
9 21 W\S
9
$ 9 219 211/
9 21a, /
,/
Figure 7
Typical Output Voltage Drop Limitation
4.1.3
Output Inductive Clamp
When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT -VL ).
V bb VBB VON
IL OUT V OUT L, RL
OutputClamp .emf
Figure 8
Output Clamp
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load inductance is limited.
Data Sheet
12
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Power Stages
V OUT Vbb
ON
OFF
V OUT(CL) IL
VON(CL)
t
t
InductiveLoad.emf
Figure 9
Switching an Inductance
Maximum Load Inductance
While de energizing inductive loads, energy has to be dissipated in the BTS 6142D. This energy can be calculated via the following equation:
V bb - V ON ( CL ) RL IL L E = V ON ( CL ) ---------------------------------------- ln 1 + -------------------------------------- + IL -----RL RL V ON(CL) - V bb
In the event of de-energizing very low ohmic inductances (RL0) the following, simplified equation can be used:
V ON(CL) 2 1 E = -- LIL -------------------------------------2 V ON(CL) - V bb
The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed inductance at Vbb=12V.
Data Sheet
13
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Power Stages
Vbb = 12 V Tj(o) 150C
/
P+
$
,/
Figure 10
Maximum load inductance for single pulse, Tj,Start = 150C
Data Sheet
14
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Power Stages
4.1.4
Pos.
Electrical Characteristics
Parameter Symbol Limit Values min. typ. max. Unit Test Conditions
Vbb = 12 V, Tj = 25 C (unless otherwise specified)
General 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 Operating voltage Undervoltage shutdown 1) Undervoltage restart of charge pump Operating current Stand-by current Tj = -40 C, Tj = 25 C Tj 120 C 1) Tj = 150 C Input current for turn-on Input current for turn-off
Vbb VbIN(u) Vbb(ucp) IIN Ibb(OFF)
5.5 -
2.5 4 1.4 3 3 9
38 3.5 5.5 2.2 6 6 16
V V V mA A
VIN = 0 V Tj = -40..150 C Tj = -40..150 C IIN = 0 A
Input characteristics 4.1.6 4.1.7
IIN(on) IIN(off)
-
1.4 -
2.2 30
mA A
VbINVbb(ucp)-VIN, Tj = -40 ... 150 C Tj = -40 ... 150 C
Output characteristics 4.1.8 On-state resistance RDS(ON) Tj=25C Tj=150C Vbb=5.5V, Tj=25C Vbb=5.5V, Tj=150C m 10 17 12 22 30 12 22 17 29 65 mV
VIN=0V, IL=7.5A,
(Tab to pin 1 and 5)
4.1.9
VON(NL) Output voltage drop limitation at small load currents
Tj = -40..150 C
4.1.10 Nominal load current IL(nom) (Tab to pin1 & 5) 2) 3) ISO load current (Tab to pin 1 & 5) 3)
7
8.5
-
A
IL(ISO)
27
33
-
A
Ta = 85 C VON 0.5 V, Tj 150 C Tc = 85 C VON 0.5 V, Tj 150 C
V1.0, 2005-10-25
Data Sheet
15
Smart High-Side Power Switch BTS 6142D
Power Stages
Vbb = 12 V, Tj = 25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. 4.1.11 Output clamp typ. 42 max. V mV 39 Unit Test Conditions
VON(CL)
4.1.12 Inverse current output -VON(inv) voltage drop 1) 4) (Tab to pin 1 and 5) Tj = 25 C Tj = 150 C Timings 4.1.13 Turn-on time to 90% Vbb 4.1.14 Turn-off time to 10% Vbb
IL = 40 mA IL = -7.5 A, RIS = 1 k
-
800 600
-
tON tOFF
-
250 250 1
600 600 -
s s ms
4.1.15 Turn-on delay after td(inv) 1) inverse operation VIN(inv) = VIN(fwd) = 0 V 4.1.16 Slew rate On 25% to 50% Vbb 4.1.17 Slew rate Off 50% to 25% Vbb Thermal Resistance 4.1.18 Junction to case 1) 4.1.19 Junction to ambient 1) free air device on PCB 2)
1) 2)
RL = 2.2 , Tj = -40 ... 150 C RL = 2.2 , Tj = -40 ... 150 C Vbb > VOUT RL = 2.2 , Tj = -40 ... 150 C RL = 2.2 , Tj = -40 ... 150 C
-
dV/ dtON -dV/ dtOFF
-
0.3 0.3
0.7 0.7
V/s V/s
Rthjc Rthja
-
80 45
1.3 55
K/W K/W
Not subject to production test, specified by design Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 m thick) for Vbb connection. PCB is vertical without blown air. Not subject to production test, parameters are calculated from RDS(ON) and Rth Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode. A sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached.
3) 4)
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.
Data Sheet 16 V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protection Functions
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are neither designed for continuous nor repetitive operation.
4.2.1
Over-Load Protection
The load current IL is limited by the device itself in case of over-load or short circuit to ground. There are multiple steps of current limitation ILx(SC) which are selected automatically depending on the voltage drop VON across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a typical device.
, /6& $ 9 216& 9 9 21
Tj = 25C
W\S
Figure 11
Typical Current Limitation
Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies. Whenever the resulting voltage drop VON exceeds the short circuit detection threshold VON(SC), the device will switch off immediately and latch until being reset via the input. The VON(SC) detection functionality is activated, when VbIN>10V typ. and the blanking time td(SC1) expired after switch on. In the event that either the short circuit detection via VON(SC) is not activated or that the on chip temperature sensor senses over-temperature before the blanking time td(SC1) expired, the device switches off resulting from over-temperature detection. After cooling down with thermal hysteresis, the devices switches on again. Please refer to Figure 12 for details.
Data Sheet 17 V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protection Functions
VON(SC) detection Over temperature detection
I IN VON VONx > VON(SC) ILx(SC) IL tm td(SC1) t
V_ON_detect.emf
IIN
t
IL
t
t
j
t
thermal hysteresis
t
Over_Temp .emf
Figure 12
Overload Behavior
4.2.2
Short circuit impedance
The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance.
/ 6&
5uH Vbb IN OUT LSC
X+ 9 EE 9
9 EE 9 9 EE 9
10m Vbb
PROFET
IS
RSC
LO AD
SHORT CIRCUIT

P
short_circuit.emf
5 6&
Figure 13
Short circuit
4.2.3
Reverse Polarity Protection - ReversaveTM
The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReversaveTM functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated VGSVRbb. Please refer to Figure 14 for details.
Data Sheet 18 V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protection Functions
-Vbb IRbb Rbb Vbb
RIN -IIN
IN IS
Logic
-IL LOAD
power ground
D RIS
signal ground
-IIS
Reverse.emf
Figure 14
Reverse battery protection
Additional power is dissipated by the integrated Rbb resistor. Use following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode.
P diss(rev) R ON(rev) I L + R bb I Rbb
For reverse battery voltages up to Vbb <16V the pin IN or the pin IS should be low ohmic connected to signal ground. This can be achieved e.g. by using a small signal diode D in parallel to the input switch or by using a small signal MOSFET driver. For reverse battery voltages higher then Vbb >16V an additional resistor RIN is recommended. For reverse battery voltages higher then Vbb >16 the overall current through Rbb should be about 80mA. 1 0,08A 1 -------- + --------- = ---------------------------V bb - 12V R IN R bb Note: No protection mechanism is active during reverse polarity. The IC logic is not functional.
2
2
Data Sheet
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V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protection Functions
4.2.4
Over-Voltage Protection
Beside the output clamp for the power stage as described in Section 4.1.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details.
Rbb VZ,IN VZ,IS
Vbb
IN
IS
Logic
OUT
OverVoltage .emf
Figure 15
Over-Voltage Protection
4.2.5
Loss of Ground Protection
In case of complete loss of the device ground connections the BTS 6142D securely changes to or remains in off state.
4.2.6
Loss of Vbb Protection
In case of complete loss of Vbb the BTS 6142D remains in off state. In case of loss of Vbb connection with charged inductive loads a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 39 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to 120 mA. Please refer to Figure 16 for details.
Vbb Rbb Vbb Vbb R bb Vbb
Logic
IN R IN
IS
VZb VD inductive LOAD VZL
Vbb_disconnect_A.emf
IN IS RIN
Logic
VD
RIS
R IS
inductive LOAD
Vbb_disconnect_B.emf
Figure 16
Loss of Vbb
20 V1.0, 2005-10-25
Data Sheet
Smart High-Side Power Switch BTS 6142D
Protection Functions
4.2.7
Pos.
Electrical Characteristics
Parameter Symbol Limit Values min. typ. max. Unit Test Conditions
Vbb = 12 V, Tj = +25 C (unless otherwise specified)
Over-Load Protection 4.2.1 Load current limitation1) 2) IL6(SC) Tj = -40 C Tj = +25 C Tj = +150 C Load current limitation 2) IL12(SC) Tj = -40 C Tj = +25 C Tj = +150 C Load current limitation1) 2) IL18(SC) Tj = -40 C Tj = +25 C Tj = +150 C Load current limitation 2) IL24(SC) Tj = -40 C Tj = +25 C Tj = +150 C Load current limitation1) 2) IL30(SC) Tj = -40 C Tj = +25 C Tj = +150 C Short circuit shutdown VON(SC) detection voltage 1) Short circuit shutdown td(SC1) delay after input current pos. slope3) Thermal shut down temperature A 50 45 30 2.5 200 110 100 75 90 80 70 60 60 50 40 40 35 25 25 25 3.5 650 160 A 120 A 90 A A 4.5 V
VON = 6 V,
(Tab to pin 1 and 5)
4.2.2
VON = 12 V, tm = 170 s,
(Tab to pin 1 and 5)
4.2.3
VON = 18 V,
(Tab to pin 1 and 5)
4.2.4
VON = 24 V, tm = 170 s,
(Tab to pin 1 and 5)
4.2.5
VON = 30 V,
(Tab to pin 1 and 5)
4.2.6 4.2.7
VbIN > 10 V typ. VON > VON(SC), Tj = -40 ... 150 C
-
1200 s
4.2.8 4.2.9
Tj(SC)
150 -
165
1)
-
C K
Thermal hysteresis 1) Tj
10
Data Sheet
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V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Protection Functions
Vbb = 12 V, Tj = +25 C (unless otherwise specified)
Pos. Parameter Symbol Limit Values min. Reverse Battery 4.2.10 On-State resistance RON(rev) in case of reverse polarity Vbb=-8V, Tj=25C 1) Vbb=-8V, Tj=150C 1) Vbb=-12V, Tj=25C Vbb=-12V, Tj=150C 4.2.11 Integrated resistor in Vbb line Over-Voltage 4.2.12 Over-voltage protection Input pin Sense pin
1) 2) 3)
Unit
Test Conditions
typ.
max.
m
VIN = 0, IL = -7.5A, RIS = 1 k,
(pin 1 and 5 to TAB)
-
12 20 12 18 100
16 27 15 24 150
Rbb
-
VZ VZ,IN VZ,IS
63 56 67 61 -
V V V
Ibb = 15 mA, Tj = -40 ... 150 C
Not subject to production test, specified by design Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12. min. value valid only if input "off-signal" time exceeds 30 s
Data Sheet
22
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Diagnosis
4.3
Diagnosis
For diagnosis purpose, the BTS 6142D provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as Vb,IS>5V. The ratio of the output current is defined as kILIS=IL/IIS. During switch-on no current is provided, until the forward voltage drops below VON<1V typ. The output sense current is limited to IIS,lim. The pin IS provides in case of any fault conditions a defined fault current IIS(fault). Fault conditions are over-current (VON>1V typ.), current limit or over-temperature switch off. The pin IS provides no current during open load in ON, de-energisation of inductive loads and inverse current mode.
Vb,IS Vbb R bb IIS I IS(fault) IS VIS R IS
Sense.emf
VZ,IS
Figure 17 Table 1 Parameter Normal operation Overload
Block Diagram: Diagnosis Truth Table Input Current Level L1) H1) L H Output Level L H L H L L L L H H Z1) H Current Sense IIS 0 (IIS(LL)) nominal 0 (IIS(LL))
IIS,fault
0 (IIS(LL))
Short circuit to GND L H Overtemperature Short circuit to Vbb Open load L H L H L H
IIS,fault
0 (IIS(LL))
IIS,fault
0 (IIS(LL)) < nominal2) 0 (IIS(LL)) 0 (IIS(LH))
Data Sheet
23
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Diagnosis
1) 2)
H = "High" Level, L = "Low" Level, Z = high impedance, potential depends on external circuit Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to Figure 18 for details. A typical resistor RIS of 1 k is recommended.
N ,/,6 , /PLQ $ ,/ PD[ W\S PLQ
Figure 18
Current sense ratio kILIS1)
Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ON-state can be found in Figure 19. Note: During operation at low load current and at activated forward voltage drop limitation the "two level control" of VON(NL) can cause a sense current ripple synchronous to the "two level control" of VON(NL) . The ripple frequency increases at reduced load currents.
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.1 (Position 4.3.1).
Data Sheet
24
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Diagnosis
normal operation VON<1V typ. IL2 VON>1V typ. t short VON>VON(SC) over-temperature VON<1V typ. t
IIN VON
I IN VON
IL
I L1
t
IL
I Lx(SC) IIS(fault) I IS(fault)
t IL t
IIS 0.9*I IS1 t son(IS) I IS1
IIS2
IIS(lim) I IS(fault)
t IIS(LL)
IIS
tslc(IS)
t
tdelay(fault)
t
SwitchOn.emf
Figure 19
Timing of Diagnosis Signal in ON-state
Data Sheet
25
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Diagnosis
4.3.1
Pos.
Electrical Characteristics
Parameter Symbol Limit Values min. typ. max. Unit Test Conditions
Vbb = 12 V, Tj = 25 C (unless otherwise specified)
Load Current Sense 4.3.1 Current sense ratio, static on-condition
kILIS
8 7.5 6.5 3
10 10 10 10 10 disabled
12 13 16 30
k
IL=30A IL=7.5A IL=2.5A IL=0.5A IIN = 0 (e.g. during de
energizing of inductive loads) 1) 4.3.2 4.3.3 4.3.4 4.3.5 4.3.6 4.3.7 4.3.8 4.3.9 Sense saturation current 1) Sense current under fault conditions Current sense leakage current Current sense offset current
VIN = 0 V, IIS < IIS,lim Tj = -40..150 C
-
-
IIS(lim) IIS(fault) IIS(LL) IIS(LH)
2.5 2.5 - - 0.5 - - 200
6 6 0.1 0.1 - 350 50 650
10 10 0.5 1 - 700 100
mA mA A A A s s
VON < 1 V, typ. Tj = -40 ... 150 C VON > 1 V, typ. Tj = -40 ... 150 C IIN = 0 VIN = 0, IL 0 VIN = 0, Tj = -40 ... 150 C IL = 0 20 A Tj = -40 ... 150 C IL = 10 20 A Tj = -40 ... 150 C VON > 1 V, typ. Tj = -40 ... 150 C
Minimum load current IL(MIN) for sense functionality Current sense settling tson(IS) time to 90% IIS_stat.1) Current sense settling tslc(IS) time to 90% IIS_stat.1)
tdelay(fault) Fault-Sense signal delay after input current positive slope
1200 s
1)
Not subject to production test, specified by design
Data Sheet
26
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Package Outlines BTS 6142D
5
Package Outlines BTS 6142D
P-TO-252-5-1 (Plastic Dual Small Outline Package)
You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 27 Dimensions in mm V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Revision History
6
Version V1.0
Revision History
Date 04-10-25 Changes initial version of Final Data Sheet
Data Sheet
28
V1.0, 2005-10-25
Smart High-Side Power Switch BTS 6142D
Edition 2005-10-25 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany
(c) Infineon Technologies AG 10/26/05.
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
29
V1.0, 2005-10-25
http://www.infineon.com
Published by Infineon Technologies AG

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